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PMEM4020APD
PNP transistor/Schottky rectifier module
Rev. 02 -- 31 August 2009 Product data sheet
1. Product profile
1.1 General description
Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020AND
1.2 Features
I I I I I I 600 mW total power dissipation High current capability up to 2 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor N Low collector-emitter saturation voltage I Diode N Ultra high-speed switching N Very low forward voltage N Guard ring protected
1.3 Applications
I I I I I DC-to-DC converters Inductive load drivers General purpose load drivers Reverse polarity protection circuits MOSFET drivers
1.4 Quick reference data
Table 1. Symbol VCEO IC Quick reference data Parameter collector-emitter voltage collector current (DC) Conditions open base continuous; Ts 55 C
[1]
Min -
Typ -
Max -40 -2
Unit V A
PNP transistor
NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
Quick reference data ...continued Parameter continuous reverse voltage continuous forward current Conditions Min Typ Max 40 1 Unit V A
Table 1. Symbol VR IF
[1]
Schottky barrier rectifier
Soldering point of collector or cathode tab.
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Discrete pinning Description emitter not connected cathode anode base collector
5
Simplified outline
6 5 4
Symbol
4
3 6
1
2
3
1
sym040
3. Ordering information
Table 3. Ordering information Package Name PMEM4020APD SC-74 Description plastic surface mounted package; 6 leads Version SOT457 Type number
4. Marking
Table 4. Marking Marking code D3 Type number PMEM4020APD
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO Parameter collector-base voltage collector-emitter voltage emitter-base voltage Conditions open emitter open base open collector Min Max -40 -40 -5 Unit V V V PNP transistor
PMEM4020APD_2
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Product data sheet
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PMEM4020APD
PNP transistor/Schottky rectifier module
Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IC Parameter collector current (DC) Conditions continuous continuous continuous continuous; Ts 55 C ICM IBM Ptot peak collector current peak base current total power dissipation Tamb 25 C Tamb 25 C Tamb 25 C Ts 55 C Tj VR IF IFRM IFSM Ptot junction temperature continuous reverse voltage continuous forward voltage repetitive peak forward current non-repetitive peak forward current total power dissipation tp 1 ms; 0.5 t = 8 ms; square wave Tamb 25 C Tamb 25 C Tamb 25 C Ts 55 C Tj Ptot Tstg Tamb
[1] [2] [3] [4]
[1] [2] [3] [4] [2] [1] [2] [3] [4] [1] [2] [3] [4]
Min -65
[2]
Max -0.75 -1 -1.3 -2 -3 -1 295 400 500 1000 150 40 1 3.5 10 295 400 500 1000 150 600 +150 +150
Unit A A A A A A mW mW mW mW C V A A A mW mW mW mW C mW C C
Schottky barrier rectifier
junction temperature total power dissipation storage temperature ambient temperature Tamb 25 C
Combined device
[2]
-65
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both collector and cathode. Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. Soldering point of collector or cathode tab.
PMEM4020APD_2
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Product data sheet
Rev. 02 -- 31 August 2009
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NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
6. Thermal characteristics
Table 6. Thermal characteristics[1] Conditions in free air in free air
[2]
Symbol Parameter Single device Rth(j-s) Rth(j-a) thermal resistance from junction to soldering point thermal resistance from junction to ambient
Min -
Typ -
Max 95 250 315 425 208
Unit K/W K/W K/W K/W K/W
[3] [4] [5]
Combined device Rth(j-a)
[1]
thermal resistance from junction to ambient
in free air
[3]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. Soldering point of collector or cathode tab. Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both collector and cathode tab. Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] [3] [4] [5]
PMEM4020APD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
4 of 13
NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = -40 V; IE = 0 A VCB = -40 V; IE = 0 A; Tj = 150 C VCE = -30 V; IB = 0 A VEB = -5 V; IC = 0 A VCE = -5 V; IC = -1 mA VCE = -5 V; IC = -100 mA VCE = -5 V; IC = -500 mA VCE = -5 V; IC = -1 A VCE = -5 V; IC = -2 A VCEsat collector-emitter saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -1 A; IB = -100 mA IC = -2 A; IB = -200 mA RCEsat VBEsat VBEon fT Cc equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = -1 A; IB = -100 mA IC = -1 A; IB = -100 mA VCE = -5 V; IC = -1 A VCE = -10 V; IC = -50 mA; f = 100 MHz VCB = -10 V; IE = ie = 0 A; f = 1 MHz see Figure 1 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 1000 mA IR reverse current see Figure 2 VR = 10 V VR = 40 V Cd diode capacitance
Pulse test: tp 300 s; 0.02
(c) NXP B.V. 2009. All rights reserved.
Min 300 300 250 160
[1]
Typ 180 -
Max -100 -50 -100 -100 900 -120 -145 -260 -530 280 -1.1 -1.0 10
Unit nA A nA nA
PNP transistor
ICEO IEBO hFE
50 -
mV mV mV mV m V V MHz pF
[1]
150 -
[1]
[1]
Schottky barrier rectifier VF continuous forward voltage
[1] [1] [1] [1] [1]
-
95 155 220 295 540 7 30 43
130 210 270 350 640 20 100 48
mV mV mV mV mV A A pF
[1] [1]
VR = 1 V; f = 1 MHz; see Figure 3
[1]
PMEM4020APD_2
Product data sheet
Rev. 02 -- 31 August 2009
5 of 13
NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
103 IF (mA) 102
mdb669
105 IR (A) 104
mdb670
(1)
103
(2)
10
(1)
(2)
(3)
102
1
10
(3)
10-1
1
0
0.2
0.4
VF (V)
0.6
0
10
20
30
VR (V)
40
Schottky barrier rectifier (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C
Schottky barrier rectifier (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C
Fig 1.
Forward current as a function of forward voltage; typical values
mdb671
Fig 2.
Reverse current as a function of reverse voltage; typical values
mhc088
100 Cd (pF) 80
1200 hFE 1000
(1)
800 60 600 40 400
(3) (2)
20
200
0 0 5 10 15 VR (V) 20
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
Schottky barrier rectifier; Tamb = 25 C; f = 1 MHz
PNP transistor; VCE = -5 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
Fig 4.
DC current gain as a function of collector current; typical values
PMEM4020APD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
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NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
-10 VBE (V)
mhc089
-103 VCEsat (mV)
mhc090
-102 -1
(1) (2)
(1)
-10
(3) (2) (3)
-10-1 -10-1
-1
-10
-102
-104 -103 IC (mA)
-1 -1
-10
-102
-103
IC (mA)
-104
PNP transistor; VCE = -5 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
PNP transistor; IC/IB = 10 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 5.
Base-emitter voltage as a function of collector current; typical values
mhc091
Fig 6.
Collector-emitter saturation voltage as a function of collector current; typical values
mhc092
102 RCEsat ()
300 fT (MHz) 250
10
200
150
1
(1)
100
50
(2) (3)
10-1 -10-1
-1
-10
-102
-104 -103 IC (mA)
0
0
-200
-400
-600
-1000 -800 I C (mA)
PNP transistor; IC/IB = 10 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
PNP transistor; VCE = -10 V
Fig 7.
Equivalent on-resistance as a function of collector current; typical values
Fig 8.
Transition frequency as a function of collector current
PMEM4020APD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
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NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
8. Application information
VCC VIN VOUT IN
CONTROLLER
mgu866
mgu867
Fig 9.
DC-to-DC converter
Fig 10. Inductive load driver (relays, motors and buzzers) with free-wheeling diode
PMEM4020APD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
8 of 13
NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
9. Package outline
Plastic surface-mounted package (TSOP6); 6 leads SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC JEITA SC-74
EUROPEAN PROJECTION
ISSUE DATE 05-11-07 06-03-16
Fig 11. Package outline SOT457 (SC-74)
PMEM4020APD_2 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
9 of 13
NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMEM4020APD Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] For further information and the availability of packing methods, see Section 13.
Packing quantity 3000 -115 -125 10000 -135 -165
PMEM4020APD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
10 of 13
NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
11. Revision history
Table 9. Revision history Release date 20090831 Data sheet status Product data sheet Change notice Supersedes PMEM4020APD_1 Document ID PMEM4020APD_2 Modifications:
* * *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 2 "Discrete pinning": amended Figure 11 "Package outline SOT457 (SC-74)": updated Product data sheet -
PMEM4020APD_1
20041004
PMEM4020APD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
11 of 13
NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMEM4020APD_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
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PMEM4020APD
PNP transistor/Schottky rectifier module
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 31 August 2009 Document identifier: PMEM4020APD_2

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